Política de Cookies

El sitio web de la Universidad de Cádiz utiliza cookies propias y de terceros para realizar análisis de uso y medición del tráfico, así como permitir el correcto funcionamiento en redes sociales, y de este modo poder mejorar su experiencia de navegación.

Si desea configurar las cookies, pulse el botón Personalizar Cookies. También puede acceder a la configuración de cookies en cualquier momento desde el enlace correspondiente en el pie de página.

Para obtener más información sobre las cookies puede consultar la Política de cookies del sitio web de la Universidad de Cádiz.

Personalización de Cookies

El sitio web de la Universidad de Cádiz utiliza cookies propias y de terceros para realizar análisis de uso y medición del tráfico, así como permitir el correcto funcionamiento en redes sociales, y de este modo poder mejorar su experiencia de navegación.

Para obtener más información sobre las cookies puede consultar la Política de cookies del sitio web de la Universidad de Cádiz. También puede acceder a la configuración de cookies en cualquier momento desde el enlace correspondiente en el pie de página.

A continuación podrá configurar las cookies del sitio web según su finalidad:

  • Análisis estadístico

    En este sitio se utilizan cookies de terceros (Google Analytics) que permiten cuantificar el número de usuarios de forma anónima (nunca se obtendrán datos personales que permitan identificar al usuario) y así poder analizar la utilización que hacen los usuarios del nuestro servicio, a fin de mejorar la experiencia de navegación y ofrecer nuestros contenidos de manera óptima.

  • Redes sociales

    En este sitio web se utilizan cookies de terceros que permiten el correcto funcionamiento de algunas redes sociales (principalmente Youtube y Twitter) sin utilizar ningún dato personal del usuario.



Información ORCID de GARCIA ROJA, RAFAEL


Biografía


Researcher at the Materials Science, Metallurgical Engineering and Inorganic Chemistry Department, Universidad de Cádiz


Empleo


Universidad de Cádiz: Cádiz, Andalucía, España



Obras


Optical and nanostructural insights of oblique angle deposited layers applied for photonic coatings

2020 | JOURNAL_ARTICLE

DOI: 10.1016/j.apsusc.2020.146312

Mostrar Detalles




On the importance of light scattering for high performances nanostructured antireflective surfaces

2020 | JOURNAL_ARTICLE

DOI: 10.1016/j.actamat.2020.02.014

Mostrar Detalles




Simultaneous Optical and Electrical Characterization of GaN Nanowire Arrays by Means of Vis-IR Spectroscopic Ellipsometry

2020 | JOURNAL_ARTICLE

DOI: 10.1021/acs.jpcc.9b10556

Mostrar Detalles




(S)TEM methods contributions to improve the fabrication of InGaN thin films on Si, and InN nanostructures on flat Si and rough InGaN

2019 | JOURNAL_ARTICLE

DOI: 10.1016/j.jallcom.2018.12.319

EID: 2-s2.0-85059470019

Mostrar Detalles




Comprehensive (S)TEM characterization of polycrystalline GaN/AlN layers grown on LTCC substrates

2019 | JOURNAL_ARTICLE

DOI: 10.1016/j.ceramint.2019.01.250

EID: 2-s2.0-85060922115

Mostrar Detalles




Nanostructure and Physical Properties Control of Indium Tin Oxide Films Prepared at Room Temperature through Ion Beam Sputtering Deposition at Oblique Angles

2019 | JOURNAL_ARTICLE

DOI: 10.1021/acs.jpcc.9b02885

EID: 2-s2.0-85066912602

Mostrar Detalles




Porosity Control for Plasma-Assisted Molecular Beam Epitaxy of GaN Nanowires

2019 | JOURNAL_ARTICLE

DOI: 10.1021/acs.cgd.9b00146

EID: 2-s2.0-85063365762

Mostrar Detalles




Surface oxidation of amorphous Si and Ge slanted columnar and mesoporous thin films: Evidence, scrutiny and limitations for infrared optics

2019 | JOURNAL_ARTICLE

DOI: 10.1016/j.apsusc.2019.07.064

EID: 2-s2.0-85068975431

Mostrar Detalles




Towards perfect MWIR transparency using oblique angle deposition

2019 | JOURNAL_ARTICLE

DOI: 10.1016/j.apsusc.2018.11.176

EID: 2-s2.0-85057338001

Mostrar Detalles




Unravelling the polarity of InN quantum dots using a modified approach of negative-spherical-aberration imaging

2019 | JOURNAL_ARTICLE

DOI: 10.1039/c9nr04146j

EID: 2-s2.0-85069176047

Mostrar Detalles




Unravelling the polarity of InN quantum dots using a modified approach of negative-spherical-aberration imaging

2019 | JOURNAL_ARTICLE

DOI: 10.1039/C9NR04146J

Mostrar Detalles




Anomalous relaxation in combined low and high temperature growth of InGaAs/GaAs epilayers

2018 | BOOK

DOI: 10.1201/9781351074636

EID: 2-s2.0-85053325896

Mostrar Detalles




Characterization of InGaAs (N)/GaAsN multi-quantum wells using transmission electron microscopy

2018 | BOOK

DOI: 10.1201/9781351074636

EID: 2-s2.0-85053290636

Mostrar Detalles




Engineering of III-Nitride Semiconductors on Low Temperature Co-fired Ceramics

2018 | JOURNAL_ARTICLE

DOI: 10.1038/s41598-018-25416-6

EID: 2-s2.0-85046453431

Mostrar Detalles




Formation mechanisms of single-crystalline InN quantum dots fabricated via droplet epitaxy

2018 | JOURNAL_ARTICLE

DOI: 10.1016/j.jcrysgro.2018.04.027

EID: 2-s2.0-85046722503

Mostrar Detalles




Low temperature epitaxial deposition of GaN on LTCC substrates

2017 | CONFERENCE_PAPER

DOI: 10.1109/WiPDA.2017.8170501

EID: 2-s2.0-85046482774

Mostrar Detalles




Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction

2016 | JOURNAL_ARTICLE

DOI: 10.1038/srep28459

EID: 2-s2.0-84976574135

Mostrar Detalles




Inline electron holography and VEELS for the measurement of strain in ternary and quaternary (In,Al,Ga)N alloyed thin films and its effect on bandgap energy

2016 | JOURNAL_ARTICLE

DOI: 10.1111/jmi.12312

EID: 2-s2.0-84951566810

Mostrar Detalles




Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing

2015 | JOURNAL_ARTICLE

DOI: 10.1088/0957-4484/26/42/425703

EID: 2-s2.0-84947550366

Mostrar Detalles




Improving Magnetooptical Faraday Effect of maghemite/silica nanocomposites

2015 | JOURNAL_ARTICLE

DOI: 10.1016/j.matchemphys.2014.12.049

EID: 2-s2.0-84923105848

Mostrar Detalles




Near-infrared emitting In-rich InGaN layers grown directly on Si: Towards the whole composition range

2015 | JOURNAL_ARTICLE

DOI: 10.1063/1.4909515

EID: 2-s2.0-84923334324

Mostrar Detalles




Quantitative Chemical Mapping of InGaN Quantum Wells from Calibrated High-Angle Annular Dark Field Micrographs

2015 | JOURNAL_ARTICLE

DOI: 10.1017/S143192761501301X

EID: 2-s2.0-84938414515

Mostrar Detalles




Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111)

2015 | JOURNAL_ARTICLE

DOI: 10.1063/1.4905662

EID: 2-s2.0-84923775262

Mostrar Detalles




The Role of Edge Dislocations on the Red Luminescence of ZnO Films Deposited by RF-Sputtering

2015 | JOURNAL_ARTICLE

DOI: 10.1155/2015/970545

EID: 2-s2.0-84950128601

Mostrar Detalles




Epitaxial growth of Fe islands on LaAlO3 (001) substrates

2014 | JOURNAL_ARTICLE

DOI: 10.1016/j.jcrysgro.2014.01.001

EID: 2-s2.0-84894438140

Mostrar Detalles




Evaluation of interpolations of InN, AlN and GaN lattice and elastic constants for their ternary and quaternary alloys

2013 | JOURNAL_ARTICLE

DOI: 10.1088/0022-3727/46/24/245502

EID: 2-s2.0-84878783720

Mostrar Detalles




N-type conductivity and properties of carbon-doped InN(0001) films grown by molecular beam epitaxy

2013 | JOURNAL_ARTICLE

DOI: 10.1063/1.4775736

EID: 2-s2.0-84872831545

Mostrar Detalles




Selective ion-induced intermixing and damage in low-dimensional GaN/AlN quantum structures

2013 | JOURNAL_ARTICLE

DOI: 10.1088/0957-4484/24/50/505717

EID: 2-s2.0-84889672519

Mostrar Detalles




Spontaneous formation of InGaN nanowall network directly on Si

2013 | JOURNAL_ARTICLE

DOI: 10.1063/1.4803017

EID: 2-s2.0-84877263937

Mostrar Detalles




Structural and optical characterization of Mg-doped GaAs nanowires grown on GaAs and Si substrates

2013 | JOURNAL_ARTICLE

DOI: 10.1063/1.4829455

EID: 2-s2.0-84887873500

Mostrar Detalles




Uniform low-to-high in composition InGaN layers grown on Si

2013 | JOURNAL_ARTICLE

DOI: 10.7567/APEX.6.115503

EID: 2-s2.0-84887813340

Mostrar Detalles




Cubic and hexagonal InGaAsN dilute arsenides by unintentional homogeneous incorporation of As into InGaN

2012 | JOURNAL_ARTICLE

DOI: 10.1016/j.scriptamat.2011.11.025

EID: 2-s2.0-84855865656

Mostrar Detalles




Si and Ge nanostructures epitaxy on a crystalline insulating LaAlO 3(001) substrate

2012 | JOURNAL_ARTICLE

DOI: 10.1002/pssa.201100701

EID: 2-s2.0-84859343991

Mostrar Detalles




Strain relief: Mainspring of Ge semiconducting nanostructures growth on LaAlO 3(0 0 1)

2012 | JOURNAL_ARTICLE

DOI: 10.1016/j.actamat.2011.12.038

EID: 2-s2.0-84857421532

Mostrar Detalles




Threading dislocation propagation in AlGaN/GaN based HEMT structures grown on Si (111) by plasma assisted molecular beam epitaxy

2012 | JOURNAL_ARTICLE

DOI: 10.1016/j.jcrysgro.2012.07.037

EID: 2-s2.0-84865058342

Mostrar Detalles




Evaluation of the in desorption during the capping process of diluted nitride In(Ga)As quantum dots

2011 | CONFERENCE_PAPER

DOI: 10.1088/1742-6596/326/1/012049

EID: 2-s2.0-82955242409

Mostrar Detalles




Fabrication of barbed-shaped SnO@SnO2 core/shell nanowires

2011 | JOURNAL_ARTICLE

DOI: 10.1021/jp110694k

EID: 2-s2.0-79952853848

Mostrar Detalles




Growth and characterization of InAlN layers nearly lattice-matched to GaN

2011 | JOURNAL_ARTICLE

DOI: 10.1002/pssc.201000985

EID: 2-s2.0-79960736149

Mostrar Detalles




Growth mechanism and electronic properties of epitaxial In 2O3 films on sapphire

2011 | JOURNAL_ARTICLE

DOI: 10.1063/1.3658217

EID: 2-s2.0-81355142834

Mostrar Detalles




Improved structural and chemical properties of nearly lattice-matched ternary and quaternary barriers for GaN-based HEMTs

2011 | JOURNAL_ARTICLE

DOI: 10.1021/cg200341z

EID: 2-s2.0-79957993309

Mostrar Detalles




Influence of substrate crystallography on the room temperature synthesis of AlN thin films by reactive sputtering

2011 | JOURNAL_ARTICLE

DOI: 10.1016/j.apsusc.2011.05.025

EID: 2-s2.0-80051545469

Mostrar Detalles




Natural oxidation of InN quantum dots: The role of cubic InN

2010 | JOURNAL_ARTICLE

DOI: 10.1002/pssc.200982624

EID: 2-s2.0-77949741611

Mostrar Detalles




Phase mapping of aging process in InN nanostructures: Oxygen incorporation and the role of the zinc blende phase

2010 | JOURNAL_ARTICLE

DOI: 10.1088/0957-4484/21/18/185706

EID: 2-s2.0-77950930759

Mostrar Detalles




Structural and compositional homogeneity of InAlN epitaxial layers nearly lattice-matched to GaN

2010 | JOURNAL_ARTICLE

DOI: 10.1016/j.actamat.2010.04.001

EID: 2-s2.0-79958000281

Mostrar Detalles




Atomic scale high-angle annular dark field STEM analysis of the N configuration in dilute nitrides of GaAs

2009 | JOURNAL_ARTICLE

DOI: 10.1103/PhysRevB.80.125211

EID: 2-s2.0-70350646937

Mostrar Detalles




Determination of the composition of InxGa1-xN from strain measurements

2009 | JOURNAL_ARTICLE

DOI: 10.1016/j.actamat.2009.07.063

EID: 2-s2.0-70349981175

Mostrar Detalles




Microstructural improvements of InP on GaAs (001) grown by molecular beam epitaxy by in situ hydrogenation and postgrowth annealing

2009 | JOURNAL_ARTICLE

DOI: 10.1063/1.3077610

EID: 2-s2.0-59349102530

Mostrar Detalles




Structural changes during the natural aging process of InN quantum dots

2009 | JOURNAL_ARTICLE

DOI: 10.1063/1.3010309

EID: 2-s2.0-67649783386

Mostrar Detalles




High resolution HAADF-STEM imaging analysis of N related defects in GaNAs quantum wells

2008 | JOURNAL_ARTICLE

DOI: 10.1017/S1431927608082329

EID: 2-s2.0-49549095136

Mostrar Detalles




Influence of the Growth Temperature on the Composition Fluctuations of GaInNAs/GaAs Quantum Wells

2008 | BOOK

DOI: 10.1007/978-3-540-74529-7_8

EID: 2-s2.0-84976531804

Mostrar Detalles




Strain relief and nucleation mechanisms of InN quantum dots

2008 | BOOK

EID: 2-s2.0-84895400793

Mostrar Detalles




Structure of cubic polytype indium nitride layers on top of modified sapphire substrates

2008 | JOURNAL_ARTICLE

DOI: 10.1002/pssc.200777472

EID: 2-s2.0-77951129002

Mostrar Detalles




Configuration of the misfit dislocation networks in uncapped and capped InN quantum dots

2007 | JOURNAL_ARTICLE

DOI: 10.1063/1.2770776

EID: 2-s2.0-34548043760

Mostrar Detalles




Critical strain region evaluation of self-assembled semiconductor quantum dots

2007 | JOURNAL_ARTICLE

DOI: 10.1088/0957-4484/18/47/475503

EID: 2-s2.0-35748951609

Mostrar Detalles




Cubic InN growth on sapphire (0001) using cubic indium oxide as buffer layer

2007 | JOURNAL_ARTICLE

DOI: 10.1063/1.2696282

EID: 2-s2.0-33847668280

Mostrar Detalles




Evaluation of the influence of GaN and AlN as pseudosubstrates on the crystalline quality of InN layers

2007 | JOURNAL_ARTICLE

DOI: 10.1002/pssc.200674114

EID: 2-s2.0-49549089774

Mostrar Detalles




Kinetic considerations on the phase separation of GaInNAs quantum wells

2007 | JOURNAL_ARTICLE

DOI: 10.1002/pssc.200674102

EID: 2-s2.0-49549100009

Mostrar Detalles




Strain mapping at the atomic scale in highly mismatched heterointerfaces

2007 | JOURNAL_ARTICLE

DOI: 10.1002/adfm.200600813

EID: 2-s2.0-34948902209

Mostrar Detalles




Strain relief analysis of InN quantum dots grown on GaN

2007 | JOURNAL_ARTICLE

DOI: 10.1007/s11671-007-9080-6

EID: 2-s2.0-34548807151

Mostrar Detalles




Effect of growth temperature on AlGaInN layers: A TEM analysis

2006 | JOURNAL_ARTICLE

DOI: 10.1002/pssc.200565242

EID: 2-s2.0-33746354001

Mostrar Detalles




Effect of the growth temperature in the composition fluctuation of GaInNAs/GaAs quantum wells

2006 | JOURNAL_ARTICLE

DOI: 10.1017/S1431927606066360

EID: 2-s2.0-33750894813

Mostrar Detalles




Misfit relaxation of InN quantum dots: Effect of the GaN capping layer

2006 | JOURNAL_ARTICLE

DOI: 10.1063/1.2195642

EID: 2-s2.0-33646128716

Mostrar Detalles




Role of elastic anisotropy in the vertical alignment of In(Ga)As quantum dot superlattices

2006 | JOURNAL_ARTICLE

DOI: 10.1063/1.2202190

EID: 2-s2.0-33646701629

Mostrar Detalles




Structural characterization of InN quantum dots grown by Metalorganic Vapour Phase Epitaxy

2006 | JOURNAL_ARTICLE

DOI: 10.1002/pssc.200565186

EID: 2-s2.0-33746346171

Mostrar Detalles




An approach to the formation mechanism of the composition fluctuation in GaInNAs quantum wells

2005 | JOURNAL_ARTICLE

DOI: 10.1088/0268-1242/20/10/019

EID: 2-s2.0-25444437744

Mostrar Detalles




Characterization of structure and defects in dot-in-well laser structures

2005 | JOURNAL_ARTICLE

DOI: 10.1016/j.msec.2005.06.053

EID: 2-s2.0-27744497649

Mostrar Detalles




Composition modulation in GaInNAs quantum wells: Comparison of experiment and theory

2005 | JOURNAL_ARTICLE

DOI: 10.1063/1.1866491

EID: 2-s2.0-17444395202

Mostrar Detalles




Critical barrier thickness for the formation of InGaAs/GaAs quantum dots

2005 | JOURNAL_ARTICLE

DOI: 10.1016/j.msec.2005.06.052

EID: 2-s2.0-27744594801

Mostrar Detalles




Effect of the growth parameters on the structure and morphology of InAs/InGaAs/GaAs DWELL quantum dot structures

2005 | JOURNAL_ARTICLE

DOI: 10.1016/j.jcrysgro.2004.12.179

EID: 2-s2.0-18444387728

Mostrar Detalles




Influence of structure and defects on the performance of dot-in-well laser structures

2005 | CONFERENCE_PAPER

DOI: 10.1117/12.608955

EID: 2-s2.0-28344452635

Mostrar Detalles




Nucleation of InN quantum dots on GaN by metalorganic vapor phase epitaxy

2005 | JOURNAL_ARTICLE

DOI: 10.1063/1.2152110

EID: 2-s2.0-29744439239

Mostrar Detalles




Spinodal decomposition in GaInNAs/GaAs multi-quantum wells

2005 | CONFERENCE_PAPER

DOI: 10.1002/pssc.200460429

EID: 2-s2.0-27344439204

Mostrar Detalles




Strain interactions and defect formation in stacked InGaAs quantum dot and dot-in-well structures

2005 | JOURNAL_ARTICLE

DOI: 10.1016/j.physe.2004.08.098

EID: 2-s2.0-13444302552

Mostrar Detalles




Structural and optical properties of high in and N content GaInNAs quantum wells

2005 | JOURNAL_ARTICLE

DOI: 10.1016/j.tsf.2005.01.016

EID: 2-s2.0-18844457836

Mostrar Detalles




Unfaulting of dislocation loops in the GaInNAs alloy: An estimation of the stacking fault energy

2005 | JOURNAL_ARTICLE

DOI: 10.1063/1.1988976

EID: 2-s2.0-23844486782

Mostrar Detalles




Anomalous relaxation in combined low and high temperature growth of InGaAs/GaAs epilayers

2004 | BOOK

EID: 2-s2.0-7744225653

Mostrar Detalles




Carbon Fiber Reinforced Polymers (CFRP) Nd:YAG laser machining

2004 | CONFERENCE_PAPER

EID: 2-s2.0-56749085820

Mostrar Detalles




Characterization of InGaAs (N)/GaAsN multi-quantum wells using transmission electron microscopy

2004 | BOOK

EID: 2-s2.0-7744225295

Mostrar Detalles




Composition fluctuations in GaInNAs multi-quantum wells

2004 | CONFERENCE_PAPER

DOI: 10.1049/ip-opt:20040930

EID: 2-s2.0-10644294796

Mostrar Detalles




Composition modulation and growth-associated defects in GaInNAs/GaAs multi quantum wells

2004 | CONFERENCE_PAPER

EID: 2-s2.0-5044226667

Mostrar Detalles




Composition modulation in low temperature growth of InGaAs/GaAs system: Influence on plastic relaxation

2004 | JOURNAL_ARTICLE

EID: 2-s2.0-2942685889

Mostrar Detalles




Crystalline inclusions formed in C + N + BF2 coimplanted on silicon (111)

2004 | JOURNAL_ARTICLE

EID: 2-s2.0-2942660140

Mostrar Detalles




Epilayer thickness influence on composition modulation of low temperature grown InGaAs/GaAs(001) layers

2004 | JOURNAL_ARTICLE

EID: 2-s2.0-4944229460

Mostrar Detalles




High-temperature behaviour of mullites: Study by means of X-Ray Diffraction,Comportamiento de mullitas a alta temperatura: Estudio mediante Difracción de Rayos X

2004 | JOURNAL_ARTICLE

EID: 2-s2.0-33744774055

Mostrar Detalles




Improvement in the optical quality of GaInNAs/GaInAs quantum well structures by interfacial strain reduction

2004 | CONFERENCE_PAPER

DOI: 10.1049/ip-opt:20040934

EID: 2-s2.0-10644234803

Mostrar Detalles




Influence of growth temperature on the structural and optical quality of GaInNAs/GaAs multi-quantum wells

2004 | JOURNAL_ARTICLE

DOI: 10.1088/0268-1242/19/7/005

EID: 2-s2.0-3142751255

Mostrar Detalles




Influence of the Ge coverage prior to carbonization on the structure of SiC grown on Si(111)

2004 | BOOK

EID: 2-s2.0-8744242099

Mostrar Detalles




Microchemical analysis and microstructural development of Cr-doped mullites

2004 | JOURNAL_ARTICLE

EID: 2-s2.0-2942683624

Mostrar Detalles




Plastic relaxation inhibition in low temperature growth of InGaAs/GaAs(001) heterostructures,Inhibición de la relajación plástica en heteroestructuras InGaAs/GaAs(001) crecidas a baja temperatura

2004 | JOURNAL_ARTICLE

EID: 2-s2.0-55449106678

Mostrar Detalles




Structural defects characterisation of GaInNAs MQWs by TEM and PL

2004 | CONFERENCE_PAPER

DOI: 10.1049/ip-opt:20040870

EID: 2-s2.0-10644273623

Mostrar Detalles




Structural study of micro and nanotubes synthesized by rapid thermal chemical vapor deposition

2004 | JOURNAL_ARTICLE

EID: 2-s2.0-2942675337

Mostrar Detalles




Study of InGaAs/GaAs(001) buffers by combined growth of ALMBE-MBE in dynamic or stepped way,Estudio de capas de desacoplo de InGaAs/GaAs(001) por crecimiento combinado de MBE-ALMBE en forma dinámica y escalonada

2004 | JOURNAL_ARTICLE

EID: 2-s2.0-55449136775

Mostrar Detalles




The role of Ge predeposition temperature in the MBE epitaxy of SiC on silicon

2004 | CONFERENCE_PAPER

DOI: 10.1002/pssc.200303940

EID: 2-s2.0-2342448059

Mostrar Detalles




Thickness influence on spinodal decomposition in In0.2Ga0.8As/GaAs low temperature growth

2004 | BOOK

EID: 2-s2.0-7744222921

Mostrar Detalles




Transmission Electron Microscopy study of SiC layers obtained by carbonization of Si wafers,Estudio por microscopía electrónica y espectroscopía de infra-rojos de capas de SiC obtenidas mediante carburización de obleas de Si

2004 | JOURNAL_ARTICLE

EID: 2-s2.0-33744750762

Mostrar Detalles




Fatigue behaviour of laser machined 2024 T3 aeronautic aluminium alloy

2003 | JOURNAL_ARTICLE

DOI: 10.1016/S0169-4332(02)01369-7

EID: 2-s2.0-0037443206

Mostrar Detalles




Microstructural study of CO 2 laser machined heat affected zone of 2024 aluminum alloy

2003 | JOURNAL_ARTICLE

DOI: 10.1016/S0169-4332(02)01375-2

EID: 2-s2.0-0037443210

Mostrar Detalles




SiC voids, mosaic microstructure and dislocations distribution in Si carbonized layers

2003 | JOURNAL_ARTICLE

DOI: 10.1016/S0925-9635(02)00300-X

EID: 2-s2.0-0037514589

Mostrar Detalles




Size self-filtering effect in vertical stacks of InAs/InP self-assembled quantum wires

2003 | JOURNAL_ARTICLE

DOI: 10.1016/S1386-9477(02)00740-3

EID: 2-s2.0-3042681544

Mostrar Detalles




Structural Study of GaN Layers Grown on Carbonized Si(111) Substrates

2003 | BOOK

EID: 2-s2.0-18744421706

Mostrar Detalles




Transmission electron microscopy study of simultaneous high-dose C+ + N+ co-implantation into (1 1 1)Si

2003 | JOURNAL_ARTICLE

DOI: 10.1016/S0040-6090(02)01284-1

EID: 2-s2.0-0037463219

Mostrar Detalles




AlN buffer layer thickness influence on inversion domains in GaN/AlN/Si(1 1 1)

2002 | JOURNAL_ARTICLE

DOI: 10.1016/S0921-5107(02)00030-2

EID: 2-s2.0-0037198536

Mostrar Detalles




Correlation between the AlN buffer layer thickness and the GaN polarity in GaN/AlN/Si(111) grown by MBE

2002 | CONFERENCE_PAPER

EID: 2-s2.0-0038710560

Mostrar Detalles




Origin of inversion domains in GaN/AlN/Si(111) heterostructures grown by molecular beam epitaxy

2002 | JOURNAL_ARTICLE

DOI: 10.1002/1521-3951(200212)234:3<935::AID-PSSB935>3.0.CO;2-0

EID: 2-s2.0-0036929386

Mostrar Detalles




Relaxation study of AlGaAs cladding layers in InGaAs/GaAs (111)B lasers designed for 1.0-1.1 μm operation

2002 | JOURNAL_ARTICLE

DOI: 10.1016/S0026-2692(02)00018-6

EID: 2-s2.0-0036641741

Mostrar Detalles




Size-filtering effects by stacking InAs/InP (001) self-assembled quantum wires into multilayers

2002 | JOURNAL_ARTICLE

DOI: 10.1103/PhysRevB.65.241301

EID: 2-s2.0-0037098434

Mostrar Detalles




Strain relaxation behavior of InxGa1-xAs quantum wells on vicinal GaAs (111)B substrates

2002 | JOURNAL_ARTICLE

DOI: 10.1063/1.1455691

EID: 2-s2.0-79955999056

Mostrar Detalles




The role of climb and glide in misfit relief of InGaAs/GaAs(111)B heterostructures

2002 | JOURNAL_ARTICLE

DOI: 10.1016/S0026-2692(02)00019-8

EID: 2-s2.0-0036642107

Mostrar Detalles




A detailed study of Cu(In, Ga)Se2 thin films by electron-beam-induced-current and cathodoluminescence

2001 | JOURNAL_ARTICLE

EID: 2-s2.0-0035556452

Mostrar Detalles




A mechanism for the multiple atomic configurations of inversion domain boundaries in GaN layers grown on Si(111)

2001 | JOURNAL_ARTICLE

DOI: 10.1063/1.1396322

EID: 2-s2.0-0035956120

Mostrar Detalles




Effect of graded buffer design on the defect structure in InGaAs/GaAs (111)B heterostructures

2001 | JOURNAL_ARTICLE

DOI: 10.1016/S0921-5107(00)00579-1

EID: 2-s2.0-0035932270

Mostrar Detalles




Effect of indium content on the normal-incident photoresponse of InGaAs/GaAs quantum-well infrared photodetectors

2001 | JOURNAL_ARTICLE

DOI: 10.1063/1.1365951

EID: 2-s2.0-0035896784

Mostrar Detalles




Electron beam induced current and cathodoluminescence study of proton irradiated InAsxP1-x/InP quantum-well solar cells

2001 | JOURNAL_ARTICLE

DOI: 10.1063/1.1389755

EID: 2-s2.0-0035883982

Mostrar Detalles




Flame Spray Pyrolysis of Precursors as a Route to Nano-mullite Powder: Powder Characterization and Sintering Behavior

2001 | JOURNAL_ARTICLE

DOI: 10.1111/j.1151-2916.2001.tb00774.x

EID: 2-s2.0-0035353963

Mostrar Detalles




Inversion domains in GaN layers grown on (111) silicon by molecular-beam epitaxy

2001 | JOURNAL_ARTICLE

DOI: 10.1063/1.1368373

EID: 2-s2.0-0035971686

Mostrar Detalles




Proton-induced damage in p+-n InP solar cells: The role of electron capture at high fluences

2001 | JOURNAL_ARTICLE

DOI: 10.1016/S0921-5107(00)00644-9

EID: 2-s2.0-0035932226

Mostrar Detalles




Radiation response of n-type base InP solar cells

2001 | JOURNAL_ARTICLE

DOI: 10.1063/1.1398592

EID: 2-s2.0-0040927353

Mostrar Detalles




Control of phase modulation in InGaAs epilayers

2000 | JOURNAL_ARTICLE

DOI: 10.1063/1.126592

EID: 2-s2.0-0042691348

Mostrar Detalles




Electron beam induced current and cathodoluminescence study of proton irradiated quantum-well solar cells

2000 | CONFERENCE_PAPER

DOI: 10.1109/PVSC.2000.916132

EID: 2-s2.0-33947637440

Mostrar Detalles




Cathodoluminescence study of pyramidal facets in piezoelectric InGaAs/GaAs multiple quantum well pin photodiodes

1999 | JOURNAL_ARTICLE

DOI: 10.1016/S0026-2692(98)00147-5

EID: 2-s2.0-0345581346

Mostrar Detalles




Detailed defect study in proton irradiated InP/Si solar cells

1999 | JOURNAL_ARTICLE

DOI: 10.1063/1.371262

EID: 2-s2.0-0032621423

Mostrar Detalles




Effect of In-content on the misfit dislocation interaction in InGaAs/GaAs layers

1999 | JOURNAL_ARTICLE

EID: 2-s2.0-8444224364

Mostrar Detalles




Electron microscopy study of SiC obtained by the carbonization of Si(111)

1999 | JOURNAL_ARTICLE

EID: 2-s2.0-0242580459

Mostrar Detalles




Failure analysis of heavily proton irradiated p+-n InGaP solar cells by EBIC and cathodoluminescence

1999 | JOURNAL_ARTICLE

DOI: 10.1016/S0921-5107(99)00096-3

EID: 2-s2.0-0033283794

Mostrar Detalles




Growth of III-nitrides on Si(1 1 1) by molecular beam epitaxy. Doping, optical, and electrical properties

1999 | JOURNAL_ARTICLE

DOI: 10.1016/S0022-0248(98)01346-3

EID: 2-s2.0-0038606430

Mostrar Detalles




Growth rate and critical temperatures to avoid the modulation of composition of InGaAs epitaxial layers

1999 | JOURNAL_ARTICLE

DOI: 10.1063/1.123926

EID: 2-s2.0-0041924335

Mostrar Detalles




Influence of Si doping on the subgrain structure of GaN grown on AlN/Si(111)

1999 | JOURNAL_ARTICLE

DOI: 10.1002/(SICI)1521-396X(199911)176:1<401::AID-PSSA401>3.0.CO;2-D

EID: 2-s2.0-0343462255

Mostrar Detalles




Influence of substrate misorientation on the optical and structural properties of InGaAs/GaAs single strained quantum wells grown on (111)B GaAs by molecular beam epitaxy

1999 | JOURNAL_ARTICLE

DOI: 10.1016/S0026-2692(98)00138-4

EID: 2-s2.0-0345581354

Mostrar Detalles




Influence of substrate misorientation on the structural characteristics of InGaAs/GaAs MQW on (111)B GaAs grown by MBE

1999 | JOURNAL_ARTICLE

EID: 2-s2.0-0345580693

Mostrar Detalles




MBE growth of GaN and AlGaN layers on Si(1 1 1) substrates: Doping effects

1999 | JOURNAL_ARTICLE

DOI: 10.1016/S0022-0248(98)01365-7

EID: 2-s2.0-0038797130

Mostrar Detalles




Multiple quantum well GaAs/AlGaAs solar cells: Transport and recombination properties by means of EBIC and cathodoluminescence

1999 | JOURNAL_ARTICLE

DOI: 10.1016/S0921-5107(99)00095-1

EID: 2-s2.0-0033284889

Mostrar Detalles




New relaxation mechanisms in InGaAs/GaAs (111) multiple quantum well

1999 | JOURNAL_ARTICLE

DOI: 10.1016/S0026-2692(98)00154-2

EID: 2-s2.0-0342894019

Mostrar Detalles




Optical properties of InxGa1-xAs/GaAs MQW structures on (1 1 1)B GaAs grown by MBE: Dependence on substrate miscut

1999 | JOURNAL_ARTICLE

DOI: 10.1016/S0022-0248(98)01531-0

EID: 2-s2.0-0345044920

Mostrar Detalles




Piezoelectric InGaAs/GaAs (111)B multiple quantum well photodiodes: Optoelectronic properties by electron beam induced current and cathodoluminescence

1999 | JOURNAL_ARTICLE

DOI: 10.1016/S0026-2692(98)00145-1

EID: 2-s2.0-0344287197

Mostrar Detalles




Properties of homoepitaxial and heteroepitaxial GaN layers grown by plasma-assisted MBE

1999 | JOURNAL_ARTICLE

DOI: 10.1002/(SICI)1521-396X(199911)176:1<447::AID-PSSA447>3.0.CO;2-A

EID: 2-s2.0-0343898013

Mostrar Detalles




Radiation-induced order-disorder transition in p+-n InGaP solar cells

1999 | JOURNAL_ARTICLE

DOI: 10.1063/1.123936

EID: 2-s2.0-0345045514

Mostrar Detalles




Relaxation study of InxGa1-xAs/GaAs quantum-well structures grown by MBE on (0 0 1) and (1 1 1)B GaAs for long wavelength applications

1999 | JOURNAL_ARTICLE

DOI: 10.1016/S0022-0248(99)00324-3

EID: 2-s2.0-0141607994

Mostrar Detalles




Spatial distribution of radiation-induced defects in p+-n InGaP solar cells

1999 | JOURNAL_ARTICLE

DOI: 10.1063/1.124188

EID: 2-s2.0-0344614597

Mostrar Detalles




The effect of Si doping on the defect structure of GaN/AIN/Si(111)

1999 | JOURNAL_ARTICLE

DOI: 10.1063/1.123345

EID: 2-s2.0-0032615080

Mostrar Detalles




Transmission electron microscopy study of InGaAs/InP superlattices grown on V-shaped surface InP substrates

1999 | JOURNAL_ARTICLE

EID: 2-s2.0-0032630882

Mostrar Detalles




Cathodoluminescence study of heavily proton irradiated heteroepitaxial n+-p InP/Si solar cells

1998 | BOOK

EID: 2-s2.0-0032306877

Mostrar Detalles




Characterisation by TEM and X-ray diffraction of linearly graded composition InGaAs buffer layers on (001) GaAs

1998 | JOURNAL_ARTICLE

EID: 2-s2.0-1542778883

Mostrar Detalles




Critical thickness for the saturation state of strain relaxation in the InGaAs/GaAs systems

1998 | JOURNAL_ARTICLE

DOI: 10.1063/1.121212

EID: 2-s2.0-0344980226

Mostrar Detalles




Failure analysis of neutron-irradiated MQW InGaAsP/InP lasers by EBIC

1998 | BOOK

EID: 2-s2.0-17344365976

Mostrar Detalles




Influence of interface dislocations on surface kinetics during epitaxial growth of InGaAs

1998 | JOURNAL_ARTICLE

EID: 2-s2.0-18844475380

Mostrar Detalles




Optical emission of a one-dimensional electron gas in semiconductor V-shaped quantum wires

1998 | JOURNAL_ARTICLE

DOI: 10.1103/PhysRevB.58.10705

EID: 2-s2.0-0542422199

Mostrar Detalles




Relaxation mechanism of InGaAs single and graded layers grown on (111)B GaAs

1998 | JOURNAL_ARTICLE

EID: 2-s2.0-0032045633

Mostrar Detalles




A work-hardening based model of the strain relief in multilayer graded-buffer structures

1997 | JOURNAL_ARTICLE

DOI: 10.1063/1.120258

EID: 2-s2.0-0041924321

Mostrar Detalles




Advantages of thin interfaces in step-graded buffer structures

1997 | JOURNAL_ARTICLE

EID: 2-s2.0-0042765183

Mostrar Detalles




EBIC mode characterization of transport properties on laser heterostructures

1997 | JOURNAL_ARTICLE

EID: 2-s2.0-0006418454

Mostrar Detalles




Influence of the surface morphology on the relaxation of low-strained InxGa1 - xAs linear buffer structures

1997 | JOURNAL_ARTICLE

EID: 2-s2.0-0031550005

Mostrar Detalles




Structural study of AlGaAs/InGaAs superlattices grown by MBE on (111)B GaAs substrates

1997 | JOURNAL_ARTICLE

DOI: 10.1016/S0921-5107(96)01737-0

EID: 2-s2.0-0031071146

Mostrar Detalles




Work-hardening effects in the lattice relaxation of single lay er heterostructures

1997 | JOURNAL_ARTICLE

DOI: 10.1063/1.120092

EID: 2-s2.0-0344127223

Mostrar Detalles




Comparison of the crystalline quality of step-graded and continuously graded InGaAs buffer layers

1996 | JOURNAL_ARTICLE

DOI: 10.1016/S0022-0248(96)00665-3

EID: 2-s2.0-0030566425

Mostrar Detalles




Energy-loss dependence of inelastic interactions between high-energy electrons and semiconductors: A model to determine the spatial distribution of electron-hole pairs generation

1996 | JOURNAL_ARTICLE

DOI: 10.1016/S0921-5107(96)01700-X

EID: 2-s2.0-0042615903

Mostrar Detalles




SCH laser recombination rate from EBIC profiles

1996 | JOURNAL_ARTICLE

DOI: 10.1016/S0921-5107(96)01701-1

EID: 2-s2.0-0030421953

Mostrar Detalles




Design of InGaAs linear graded buffer structures

1995 | JOURNAL_ARTICLE

EID: 2-s2.0-36449005204

Mostrar Detalles




Dislocation behavior in InGaAs step- and alternating step-graded structures: Design rules for buffer fabrication

1995 | JOURNAL_ARTICLE

DOI: 10.1063/1.115341

EID: 2-s2.0-0000102276

Mostrar Detalles




A comparative study of CoRe superlattices sputtered on glass and Si substrates by grazing angle of incidence RBS, HRTEM, PAC, magnetic and transport properties studies

1994 | JOURNAL_ARTICLE

DOI: 10.1016/0168-583X(94)95814-9

EID: 2-s2.0-0000871939

Mostrar Detalles




A study of the defect structure in GaAs layers grown at low and high temperatures on Si(001) substrates

1994 | JOURNAL_ARTICLE

DOI: 10.1016/0921-5107(94)90046-9

EID: 2-s2.0-0028725953

Mostrar Detalles




Dislocation distribution in graded composition InGaAs layers

1994 | CONFERENCE_PAPER

EID: 2-s2.0-0028344470

Mostrar Detalles




Step-graded buffer layer study of the strain relaxation by transmission electron microscopy

1994 | JOURNAL_ARTICLE

DOI: 10.1016/0921-5107(94)90114-7

EID: 2-s2.0-0028695725

Mostrar Detalles




Strain relief in linearly graded composition buffer layers: A design scheme to grow dislocation-free (<10 5 cm -2 ) and unstrained epilayers

1994 | JOURNAL_ARTICLE

DOI: 10.1063/1.112707

EID: 2-s2.0-21544454349

Mostrar Detalles




Study of the defects structure in GaAs1-xPx/GaAs as x<0.25

1994 | CONFERENCE_PAPER

EID: 2-s2.0-0027987674

Mostrar Detalles




TEM characterization of GaAs pin diodes at low temperatures on Si substrates

1994 | CONFERENCE_PAPER

EID: 2-s2.0-0028015280

Mostrar Detalles




Transmission electron microscopy study of InxGa1-xAs/GaAs multilayer buffer structures used as dislocation filters

1994 | JOURNAL_ARTICLE

DOI: 10.1016/0921-5107(94)90118-X

EID: 2-s2.0-0028698797

Mostrar Detalles




A study of the evolution process of antiphase boundaries in GaAs on Si

1993 | JOURNAL_ARTICLE

DOI: 10.1007/BF02661632

EID: 2-s2.0-51249161426

Mostrar Detalles




Experimental evidence of the structure of annihilation of antiphase boundaries in GaAs on Si

1993 | JOURNAL_ARTICLE

DOI: 10.1016/0167-577X(93)90094-E

EID: 2-s2.0-0027146741

Mostrar Detalles




Structural Characterization of GaP/GaAs/GaP heterostructure by TEM

1993 | CONFERENCE_PAPER

EID: 2-s2.0-0027803855

Mostrar Detalles




High-resolution electron microscopy study of ALMBE InAs grown on (001) GaAs substrates

1992 | JOURNAL_ARTICLE

DOI: 10.1016/0304-3991(92)90134-6

EID: 2-s2.0-0026832919

Mostrar Detalles




HREM characterization of metal catalysts supported on rare-earth oxides: samarium oxide as support

1990 | JOURNAL_ARTICLE

DOI: 10.1016/0304-3991(90)90058-T

EID: 2-s2.0-0025514375

Mostrar Detalles




Metal-Support Interaction Phenomena in Some High Metal Loading Lanthana Supported Rhodium Catalysts

1989 | BOOK

DOI: 10.1016/S0167-2991(08)60676-X

EID: 2-s2.0-0347045347

Mostrar Detalles




Characterisation of rare earth oxide supported metal catalysts. Study of some ceria supported rhodium phases

1988 | JOURNAL_ARTICLE

DOI: 10.1016/0920-5861(88)85029-6

EID: 2-s2.0-0023326347

Mostrar Detalles




Study of the interaction of two hexagonal neodymium oxides with atmospheric CO2 and H2O

1988 | JOURNAL_ARTICLE

DOI: 10.1007/BF01154619

EID: 2-s2.0-0023997225

Mostrar Detalles




The chemistry in air of the rare-earth-metal sesquioxides. Comparative study of hexagonal and cubic neodymia samples

1988 | JOURNAL_ARTICLE

DOI: 10.1039/DT9880001765

EID: 2-s2.0-37049082816

Mostrar Detalles




Behaviour of neodymia as a support of highly dispersed rhodium

1987 | JOURNAL_ARTICLE

DOI: 10.1016/S0020-1693(00)81048-8

EID: 2-s2.0-45949113277

Mostrar Detalles




Behaviour of rare earth sesquioxides exposed to atmospheric carbon dioxide and water

1987 | JOURNAL_ARTICLE

DOI: 10.1016/0168-7336(87)80085-2

EID: 2-s2.0-0023435547

Mostrar Detalles




Preparation of catalysts constituted by rhodium supported on two cerium dioxides with different surface area

1987 | JOURNAL_ARTICLE

DOI: 10.1016/0254-0584(87)90116-7

EID: 2-s2.0-0023428684

Mostrar Detalles




Preparation of lanthana supported rhodium catalysts. Occurrence of heavy carbonation phenomena on the support.

1987 | JOURNAL_ARTICLE

DOI: 10.1016/S0166-9834(00)80696-X

EID: 2-s2.0-0023362654

Mostrar Detalles




Preparation of some rare earth oxide supported rhodium catalysts: Study of the supports

1987 | JOURNAL_ARTICLE

DOI: 10.1016/0254-0584(87)90093-9

EID: 2-s2.0-0023398948

Mostrar Detalles




Solid state chemistry of the preparation of lanthana-supported metal catalysts - study of the impregnation step

1987 | JOURNAL_ARTICLE

DOI: 10.1007/BF01161496

EID: 2-s2.0-0023438075

Mostrar Detalles




Stem and microdiffraction studies of Rh/CeO2

1987 | JOURNAL_ARTICLE

DOI: 10.1016/0739-6260(87)90052-9

EID: 2-s2.0-0000126206

Mostrar Detalles




Study of the aging in air of a cubic sample of samaria

1987 | JOURNAL_ARTICLE

DOI: 10.1016/0025-5408(87)90160-7

EID: 2-s2.0-0023089383

Mostrar Detalles




Study of the support evolution through the process of preparation of rhodium/lanthana catalysts

1987 | JOURNAL_ARTICLE

DOI: 10.1039/F19878302279

EID: 2-s2.0-0342720038

Mostrar Detalles




The influence of the structural nature of samaria on its behaviour against atmospheric CO2 and H2O

1987 | JOURNAL_ARTICLE

DOI: 10.1016/0167-577X(87)90036-X

EID: 2-s2.0-0023534663

Mostrar Detalles




Characterization of an experimental TPD-MS system. Reliability problems

1986 | JOURNAL_ARTICLE

DOI: 10.1016/0040-6031(86)87102-7

EID: 2-s2.0-45949127782

Mostrar Detalles




Comments on the preparation of M/4f oxide catalysts

1986 | JOURNAL_ARTICLE

DOI: 10.1016/S0166-9834(00)81369-X

EID: 2-s2.0-33748584387

Mostrar Detalles




Characterization of samaria samples stabilized in air

1985 | JOURNAL_ARTICLE

DOI: 10.1016/0022-5088(85)90354-6

EID: 2-s2.0-0022112322

Mostrar Detalles




Study of some aspects of the reactivity of La2O3 with CO2 and H2O

1985 | JOURNAL_ARTICLE

DOI: 10.1007/BF01026524

EID: 2-s2.0-0022010626

Mostrar Detalles




Influence of the textural properties on the catalytic activity of 4f oxides

1984 | JOURNAL_ARTICLE

DOI: 10.1016/0376-4583(84)90116-X

EID: 2-s2.0-0021458287

Mostrar Detalles




Alcohol decomposition as reaction test to analyse the catalytic properties of 4f oxides

1983 | JOURNAL_ARTICLE

DOI: 10.1524/zpch.1983.138.2.229

EID: 2-s2.0-84913401730

Mostrar Detalles




Analysis of some aspects of the catalytic behaviour of lanthanide oxides

1983 | JOURNAL_ARTICLE

DOI: 10.1016/0022-5088(83)90152-2

EID: 2-s2.0-0021094119

Mostrar Detalles




Characterization of an experimental TPD-MS system. Quantitative calibrations

1983 | JOURNAL_ARTICLE

DOI: 10.1016/0040-6031(83)80199-3

EID: 2-s2.0-0040788534

Mostrar Detalles




Thermal evolution of a sample of La2O3 exposed to the atmosphere

1983 | JOURNAL_ARTICLE

DOI: 10.1016/0040-6031(93)85026-6

EID: 2-s2.0-43949165920

Mostrar Detalles




Dehydrogenating behaviour of 4f metal oxides in decomposition of butanols

1981 | JOURNAL_ARTICLE

DOI: 10.1016/0021-9517(81)90197-4

EID: 2-s2.0-33847185367

Mostrar Detalles




A TPD technique for nonrestrictive kinetic studies

1979 | JOURNAL_ARTICLE

DOI: 10.1007/BF02075978

EID: 2-s2.0-34250268627

Mostrar Detalles




On the estimation of the reaction mechanisms of thermal decomposition of solids from the fraction reacted at the maximum reaction rate

1978 | JOURNAL_ARTICLE

DOI: 10.1016/0040-6031(78)85015-1

EID: 2-s2.0-0001732009

Mostrar Detalles