Información ORCID de GARCIA ROJA, RAFAEL


Biografía


Researcher at the Materials Science, Metallurgical Engineering and Inorganic Chemistry Department, Universidad de Cádiz


Empleo


Universidad de Cádiz: Cádiz, Andalucía, España



Obras


Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction

2016 | JOURNAL_ARTICLE

DOI: 10.1038/srep28459

EID: 2-s2.0-84976574135

Mostrar Detalles




Inline electron holography and VEELS for the measurement of strain in ternary and quaternary (In,Al,Ga)N alloyed thin films and its effect on bandgap energy

2016 | JOURNAL_ARTICLE

DOI: 10.1111/jmi.12312

EID: 2-s2.0-84951566810

Mostrar Detalles




Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing

2015 | JOURNAL_ARTICLE

DOI: 10.1088/0957-4484/26/42/425703

EID: 2-s2.0-84947550366

Mostrar Detalles




Near-infrared emitting In-rich InGaN layers grown directly on Si: Towards the whole composition range

2015 | JOURNAL_ARTICLE

DOI: 10.1063/1.4909515

EID: 2-s2.0-84923334324

Mostrar Detalles




Quantitative Chemical Mapping of InGaN Quantum Wells from Calibrated High-Angle Annular Dark Field Micrographs

2015 | JOURNAL_ARTICLE

DOI: 10.1017/S143192761501301X

EID: 2-s2.0-84938414515

Mostrar Detalles




Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111)

2015 | JOURNAL_ARTICLE

DOI: 10.1063/1.4905662

EID: 2-s2.0-84923775262

Mostrar Detalles




The Role of Edge Dislocations on the Red Luminescence of ZnO Films Deposited by RF-Sputtering

2015 | JOURNAL_ARTICLE

DOI: 10.1155/2015/970545

EID: 2-s2.0-84950128601

Mostrar Detalles




Epitaxial growth of Fe islands on LaAlO3(001) substrates

2014 | JOURNAL_ARTICLE

DOI: 10.1016/j.jcrysgro.2014.01.001

EID: 2-s2.0-84894438140

Mostrar Detalles




Evaluation of interpolations of InN, AlN and GaN lattice and elastic constants for their ternary and quaternary alloys

2013 | JOURNAL_ARTICLE

DOI: 10.1088/0022-3727/46/24/245502

EID: 2-s2.0-84878783720

Mostrar Detalles




N-type conductivity and properties of carbon-doped InN(0001) films grown by molecular beam epitaxy

2013 | JOURNAL_ARTICLE

DOI: 10.1063/1.4775736

EID: 2-s2.0-84872831545

Mostrar Detalles




Selective ion-induced intermixing and damage in low-dimensional GaN/AlN quantum structures

2013 | JOURNAL_ARTICLE

DOI: 10.1088/0957-4484/24/50/505717

EID: 2-s2.0-84889672519

Mostrar Detalles




Spontaneous formation of InGaN nanowall network directly on Si

2013 | JOURNAL_ARTICLE

DOI: 10.1063/1.4803017

EID: 2-s2.0-84877263937

Mostrar Detalles




Structural and optical characterization of Mg-doped GaAs nanowires grown on GaAs and Si substrates

2013 | JOURNAL_ARTICLE

DOI: 10.1063/1.4829455

EID: 2-s2.0-84887873500

Mostrar Detalles




Uniform low-to-high in composition InGaN layers grown on Si

2013 | JOURNAL_ARTICLE

DOI: 10.7567/APEX.6.115503

EID: 2-s2.0-84887813340

Mostrar Detalles




Cubic and hexagonal InGaAsN dilute arsenides by unintentional homogeneous incorporation of As into InGaN

2012 | JOURNAL_ARTICLE

DOI: 10.1016/j.scriptamat.2011.11.025

EID: 2-s2.0-84855865656

Mostrar Detalles




Si and Ge nanostructures epitaxy on a crystalline insulating LaAlO3(001) substrate

2012 | JOURNAL_ARTICLE

DOI: 10.1002/pssa.201100701

EID: 2-s2.0-84859343991

Mostrar Detalles




Strain relief: Mainspring of Ge semiconducting nanostructures growth on LaAlO3(0 0 1)

2012 | JOURNAL_ARTICLE

DOI: 10.1016/j.actamat.2011.12.038

EID: 2-s2.0-84857421532

Mostrar Detalles




Threading dislocation propagation in AlGaN/GaN based HEMT structures grown on Si (111) by plasma assisted molecular beam epitaxy

2012 | JOURNAL_ARTICLE

DOI: 10.1016/j.jcrysgro.2012.07.037

EID: 2-s2.0-84865058342

Mostrar Detalles




Evaluation of the in desorption during the capping process of diluted nitride In(Ga)As quantum dots

2011 | CONFERENCE_PAPER

DOI: 10.1088/1742-6596/326/1/012049

EID: 2-s2.0-82955242409

Mostrar Detalles




Fabrication of barbed-shaped SnO@SnO2 core/shell nanowires

2011 | JOURNAL_ARTICLE

DOI: 10.1021/jp110694k

EID: 2-s2.0-79952853848

Mostrar Detalles




Growth and characterization of InAlN layers nearly lattice-matched to GaN

2011 | JOURNAL_ARTICLE

DOI: 10.1002/pssc.201000985

EID: 2-s2.0-79960736149

Mostrar Detalles




Growth mechanism and electronic properties of epitaxial In2O3films on sapphire

2011 | JOURNAL_ARTICLE

DOI: 10.1063/1.3658217

EID: 2-s2.0-81355142834

Mostrar Detalles




Improved structural and chemical properties of nearly lattice-matched ternary and quaternary barriers for GaN-based HEMTs

2011 | JOURNAL_ARTICLE

DOI: 10.1021/cg200341z

EID: 2-s2.0-79957993309

Mostrar Detalles




Natural oxidation of InN quantum dots: The role of cubic InN

2010 | JOURNAL_ARTICLE

DOI: 10.1002/pssc.200982624

EID: 2-s2.0-77949741611

Mostrar Detalles




Phase mapping of aging process in InN nanostructures: Oxygen incorporation and the role of the zinc blende phase

2010 | JOURNAL_ARTICLE

DOI: 10.1088/0957-4484/21/18/185706

EID: 2-s2.0-77950930759

Mostrar Detalles




Structural and compositional homogeneity of InAlN epitaxial layers nearly lattice-matched to GaN

2010 | JOURNAL_ARTICLE

DOI: 10.1016/j.actamat.2010.04.001

EID: 2-s2.0-79958000281

Mostrar Detalles




Atomic scale high-angle annular dark field STEM analysis of the N configuration in dilute nitrides of GaAs

2009 | JOURNAL_ARTICLE

DOI: 10.1103/PhysRevB.80.125211

EID: 2-s2.0-70350646937

Mostrar Detalles




Determination of the composition of InxGa1-xN from strain measurements

2009 | JOURNAL_ARTICLE

DOI: 10.1016/j.actamat.2009.07.063

EID: 2-s2.0-70349981175

Mostrar Detalles




Microstructural improvements of InP on GaAs (001) grown by molecular beam epitaxy by in situ hydrogenation and postgrowth annealing

2009 | JOURNAL_ARTICLE

DOI: 10.1063/1.3077610

EID: 2-s2.0-59349102530

Mostrar Detalles




Structural changes during the natural aging process of InN quantum dots

2009 | JOURNAL_ARTICLE

DOI: 10.1063/1.3010309

EID: 2-s2.0-67649783386

Mostrar Detalles




High resolution HAADF-STEM imaging analysis of N related defects in GaNAs quantum wells

2008 | JOURNAL_ARTICLE

DOI: 10.1017/S1431927608082329

EID: 2-s2.0-49549095136

Mostrar Detalles




Structure of cubic polytype indium nitride layers on top of modified sapphire substrates

2008 | JOURNAL_ARTICLE

DOI: 10.1002/pssc.200777472

EID: 2-s2.0-77951129002

Mostrar Detalles




Configuration of the misfit dislocation networks in uncapped and capped InN quantum dots

2007 | JOURNAL_ARTICLE

DOI: 10.1063/1.2770776

EID: 2-s2.0-34548043760

Mostrar Detalles




Critical strain region evaluation of self-assembled semiconductor quantum dots

2007 | JOURNAL_ARTICLE

DOI: 10.1088/0957-4484/18/47/475503

EID: 2-s2.0-35748951609

Mostrar Detalles




Cubic InN growth on sapphire (0001) using cubic indium oxide as buffer layer

2007 | JOURNAL_ARTICLE

DOI: 10.1063/1.2696282

EID: 2-s2.0-33847668280

Mostrar Detalles




Evaluation of the influence of GaN and AlN as pseudosubstrates on the crystalline quality of InN layers

2007 | JOURNAL_ARTICLE

DOI: 10.1002/pssc.200674114

EID: 2-s2.0-49549089774

Mostrar Detalles




Kinetic considerations on the phase separation of GaInNAs quantum wells

2007 | JOURNAL_ARTICLE

DOI: 10.1002/pssc.200674102

EID: 2-s2.0-49549100009

Mostrar Detalles




Strain mapping at the atomic scale in highly mismatched heterointerfaces

2007 | JOURNAL_ARTICLE

DOI: 10.1002/adfm.200600813

EID: 2-s2.0-34948902209

Mostrar Detalles




Strain relief analysis of InN quantum dots grown on GaN

2007 | JOURNAL_ARTICLE

DOI: 10.1007/s11671-007-9080-6

EID: 2-s2.0-34548807151

Mostrar Detalles




Effect of the growth temperature in the composition fluctuation of GaInNAs/GaAs quantum wells

2006 | JOURNAL_ARTICLE

DOI: 10.1017/S1431927606066360

EID: 2-s2.0-33750894813

Mostrar Detalles




Misfit relaxation of InN quantum dots: Effect of the GaN capping layer

2006 | JOURNAL_ARTICLE

DOI: 10.1063/1.2195642

EID: 2-s2.0-33646128716

Mostrar Detalles




Role of elastic anisotropy in the vertical alignment of In(Ga)As quantum dot superlattices

2006 | JOURNAL_ARTICLE

DOI: 10.1063/1.2202190

EID: 2-s2.0-33646701629

Mostrar Detalles




Structural characterization of InN quantum dots grown by Metalorganic Vapour Phase Epitaxy

2006 | JOURNAL_ARTICLE

DOI: 10.1002/pssc.200565186

EID: 2-s2.0-33746346171

Mostrar Detalles




An approach to the formation mechanism of the composition fluctuation in GaInNAs quantum wells

2005 | JOURNAL_ARTICLE

DOI: 10.1088/0268-1242/20/10/019

EID: 2-s2.0-25444437744

Mostrar Detalles




Characterization of structure and defects in dot-in-well laser structures

2005 | JOURNAL_ARTICLE

DOI: 10.1016/j.msec.2005.06.053

EID: 2-s2.0-27744497649

Mostrar Detalles




Composition modulation in GaInNAs quantum wells: Comparison of experiment and theory

2005 | JOURNAL_ARTICLE

DOI: 10.1063/1.1866491

EID: 2-s2.0-17444395202

Mostrar Detalles




Critical barrier thickness for the formation of InGaAs/GaAs quantum dots

2005 | JOURNAL_ARTICLE

DOI: 10.1016/j.msec.2005.06.052

EID: 2-s2.0-27744594801

Mostrar Detalles




Effect of the growth parameters on the structure and morphology of InAs/InGaAs/GaAs DWELL quantum dot structures

2005 | JOURNAL_ARTICLE

DOI: 10.1016/j.jcrysgro.2004.12.179

EID: 2-s2.0-18444387728

Mostrar Detalles




Influence of structure and defects on the performance of dot-in-well laser structures

2005 | CONFERENCE_PAPER

DOI: 10.1117/12.608955

EID: 2-s2.0-28344452635

Mostrar Detalles




Nucleation of InN quantum dots on GaN by metalorganic vapor phase epitaxy

2005 | JOURNAL_ARTICLE

DOI: 10.1063/1.2152110

EID: 2-s2.0-29744439239

Mostrar Detalles




Spinodal decomposition in GaInNAs/GaAs multi-quantum wells

2005 | CONFERENCE_PAPER

DOI: 10.1002/pssc.200460429

EID: 2-s2.0-27344439204

Mostrar Detalles




Strain interactions and defect formation in stacked InGaAs quantum dot and dot-in-well structures

2005 | JOURNAL_ARTICLE

DOI: 10.1016/j.physe.2004.08.098

EID: 2-s2.0-13444302552

Mostrar Detalles




Structural and optical properties of high in and N content GaInNAs quantum wells

2005 | JOURNAL_ARTICLE

DOI: 10.1016/j.tsf.2005.01.016

EID: 2-s2.0-18844457836

Mostrar Detalles




Unfaulting of dislocation loops in the GaInNAs alloy: An estimation of the stacking fault energy

2005 | JOURNAL_ARTICLE

DOI: 10.1063/1.1988976

EID: 2-s2.0-23844486782

Mostrar Detalles




Anomalous relaxation in combined low and high temperature growth of InGaAs/GaAs epilayers

2004 | BOOK

EID: 2-s2.0-7744225653

Mostrar Detalles




Carbon Fiber Reinforced Polymers (CFRP) Nd:YAG laser machining

2004 | CONFERENCE_PAPER

EID: 2-s2.0-56749085820

Mostrar Detalles




Characterization of InGaAs (N)/GaAsN multi-quantum wells using transmission electron microscopy

2004 | BOOK

EID: 2-s2.0-7744225295

Mostrar Detalles




Composition fluctuations in GaInNAs multi-quantum wells

2004 | CONFERENCE_PAPER

DOI: 10.1049/ip-opt:20040930

EID: 2-s2.0-10644294796

Mostrar Detalles




Composition modulation and growth-associated defects in GaInNAs/GaAs multi quantum wells

2004 | CONFERENCE_PAPER

EID: 2-s2.0-5044226667

Mostrar Detalles




Composition modulation in low temperature growth of InGaAs/GaAs system: Influence on plastic relaxation

2004 | JOURNAL_ARTICLE

EID: 2-s2.0-2942685889

Mostrar Detalles




Crystalline inclusions formed in C + N + BF2 coimplanted on silicon (111)

2004 | JOURNAL_ARTICLE

EID: 2-s2.0-2942660140

Mostrar Detalles




Epilayer thickness influence on composition modulation of low temperature grown InGaAs/GaAs(001) layers

2004 | JOURNAL_ARTICLE

EID: 2-s2.0-4944229460

Mostrar Detalles




High-temperature behaviour of mullites: Study by means of X-Ray Diffraction,Comportamiento de mullitas a alta temperatura: Estudio mediante Difracción de Rayos X

2004 | JOURNAL_ARTICLE

EID: 2-s2.0-33744774055

Mostrar Detalles




Improvement in the optical quality of GaInNAs/GaInAs quantum well structures by interfacial strain reduction

2004 | CONFERENCE_PAPER

DOI: 10.1049/ip-opt:20040934

EID: 2-s2.0-10644234803

Mostrar Detalles




Influence of growth temperature on the structural and optical quality of GaInNAs/GaAs multi-quantum wells

2004 | JOURNAL_ARTICLE

DOI: 10.1088/0268-1242/19/7/005

EID: 2-s2.0-3142751255

Mostrar Detalles




Influence of the Ge coverage prior to carbonization on the structure of SiC grown on Si(111)

2004 | BOOK

EID: 2-s2.0-8744242099

Mostrar Detalles




Microchemical analysis and microstructural development of Cr-doped mullites

2004 | JOURNAL_ARTICLE

EID: 2-s2.0-2942683624

Mostrar Detalles




Plastic relaxation inhibition in low temperature growth of InGaAs/GaAs(001) heterostructures,Inhibición de la relajación plástica en heteroestructuras InGaAs/GaAs(001) crecidas a baja temperatura

2004 | JOURNAL_ARTICLE

EID: 2-s2.0-55449106678

Mostrar Detalles




Structural defects characterisation of GaInNAs MQWs by TEM and PL

2004 | CONFERENCE_PAPER

DOI: 10.1049/ip-opt:20040870

EID: 2-s2.0-10644273623

Mostrar Detalles




Structural study of micro and nanotubes synthesized by rapid thermal chemical vapor deposition

2004 | JOURNAL_ARTICLE

EID: 2-s2.0-2942675337

Mostrar Detalles




Study of InGaAs/GaAs(001) buffers by combined growth of ALMBE-MBE in dynamic or stepped way,Estudio de capas de desacoplo de InGaAs/GaAs(001) por crecimiento combinado de MBE-ALMBE en forma dinámica y escalonada

2004 | JOURNAL_ARTICLE

EID: 2-s2.0-55449136775

Mostrar Detalles




The role of Ge predeposition temperature in the MBE epitaxy of SiC on silicon

2004 | CONFERENCE_PAPER

DOI: 10.1002/pssc.200303940

EID: 2-s2.0-2342448059

Mostrar Detalles




Thickness influence on spinodal decomposition in In0.2Ga 0.8As/GaAs low temperature growth

2004 | BOOK

EID: 2-s2.0-7744222921

Mostrar Detalles




Transmission Electron Microscopy study of SiC layers obtained by carbonization of Si wafers,Estudio por microscopía electrónica y espectroscopía de infra-rojos de capas de SiC obtenidas mediante carburización de obleas de Si

2004 | JOURNAL_ARTICLE

EID: 2-s2.0-33744750762

Mostrar Detalles




Fatigue behaviour of laser machined 2024 T3 aeronautic aluminium alloy

2003 | JOURNAL_ARTICLE

DOI: 10.1016/S0169-4332(02)01369-7

EID: 2-s2.0-0037443206

Mostrar Detalles




Microstructural study of CO2laser machined heat affected zone of 2024 aluminum alloy

2003 | JOURNAL_ARTICLE

DOI: 10.1016/S0169-4332(02)01375-2

EID: 2-s2.0-0037443210

Mostrar Detalles




SiC voids, mosaic microstructure and dislocations distribution in Si carbonized layers

2003 | JOURNAL_ARTICLE

DOI: 10.1016/S0925-9635(02)00300-X

EID: 2-s2.0-0037514589

Mostrar Detalles




Size self-filtering effect in vertical stacks of InAs/InP self-assembled quantum wires

2003 | JOURNAL_ARTICLE

DOI: 10.1016/S1386-9477(02)00740-3

EID: 2-s2.0-3042681544

Mostrar Detalles




Structural Study of GaN Layers Grown on Carbonized Si(111) Substrates

2003 | BOOK

EID: 2-s2.0-18744421706

Mostrar Detalles




Transmission electron microscopy study of simultaneous high-dose C++ N+co-implantation into (1 1 1)Si

2003 | JOURNAL_ARTICLE

DOI: 10.1016/S0040-6090(02)01284-1

EID: 2-s2.0-0037463219

Mostrar Detalles




AlN buffer layer thickness influence on inversion domains in GaN/AlN/Si(1 1 1)

2002 | JOURNAL_ARTICLE

DOI: 10.1016/S0921-5107(02)00030-2

EID: 2-s2.0-0037198536

Mostrar Detalles




Correlation between the AlN buffer layer thickness and the GaN polarity in GaN/AlN/Si(111) grown by MBE

2002 | CONFERENCE_PAPER

EID: 2-s2.0-0038710560

Mostrar Detalles




Origin of inversion domains in GaN/AlN/Si(111) heterostructures grown by molecular beam epitaxy

2002 | JOURNAL_ARTICLE

DOI: 10.1002/1521-3951(200212)234:3<935::AID-PSSB935>3.0.CO;2-0

EID: 2-s2.0-0036929386

Mostrar Detalles




Relaxation study of AlGaAs cladding layers in InGaAs/GaAs (111)B lasers designed for 1.0-1.1 μm operation

2002 | JOURNAL_ARTICLE

DOI: 10.1016/S0026-2692(02)00018-6

EID: 2-s2.0-0036641741

Mostrar Detalles




Size-filtering effects by stacking InAs/InP (001) self-assembled quantum wires into multilayers

2002 | JOURNAL_ARTICLE

DOI: 10.1103/PhysRevB.65.241301

EID: 2-s2.0-0037098434

Mostrar Detalles




Strain relaxation behavior of InxGa1-xAs quantum wells on vicinal GaAs (111)B substrates

2002 | JOURNAL_ARTICLE

DOI: 10.1063/1.1455691

EID: 2-s2.0-79955999056

Mostrar Detalles




The role of climb and glide in misfit relief of InGaAs/GaAs(111)B heterostructures

2002 | JOURNAL_ARTICLE

DOI: 10.1016/S0026-2692(02)00019-8

EID: 2-s2.0-0036642107

Mostrar Detalles




A detailed study of Cu(In, Ga)Se2 thin films by electron-beam-induced-current and cathodoluminescence

2001 | JOURNAL_ARTICLE

EID: 2-s2.0-0035556452

Mostrar Detalles




A mechanism for the multiple atomic configurations of inversion domain boundaries in GaN layers grown on Si(111)

2001 | JOURNAL_ARTICLE

DOI: 10.1063/1.1396322

EID: 2-s2.0-0035956120

Mostrar Detalles




Effect of graded buffer design on the defect structure in InGaAs/GaAs (111)B heterostructures

2001 | JOURNAL_ARTICLE

DOI: 10.1016/S0921-5107(00)00579-1

EID: 2-s2.0-0035932270

Mostrar Detalles




Effect of indium content on the normal-incident photoresponse of InGaAs/GaAs quantum-well infrared photodetectors

2001 | JOURNAL_ARTICLE

DOI: 10.1063/1.1365951

EID: 2-s2.0-0035896784

Mostrar Detalles




Electron beam induced current and cathodoluminescence study of proton irradiated InAsxP1-x/InP quantum-well solar cells

2001 | JOURNAL_ARTICLE

DOI: 10.1063/1.1389755

EID: 2-s2.0-0035883982

Mostrar Detalles




Flame Spray Pyrolysis of Precursors as a Route to Nano-mullite Powder: Powder Characterization and Sintering Behavior

2001 | JOURNAL_ARTICLE

DOI: 10.1111/j.1151-2916.2001.tb00774.x

EID: 2-s2.0-0035353963

Mostrar Detalles




Inversion domains in GaN layers grown on (111) silicon by molecular-beam epitaxy

2001 | JOURNAL_ARTICLE

DOI: 10.1063/1.1368373

EID: 2-s2.0-0035971686

Mostrar Detalles




Proton-induced damage in p+-n InP solar cells: The role of electron capture at high fluences

2001 | JOURNAL_ARTICLE

DOI: 10.1016/S0921-5107(00)00644-9

EID: 2-s2.0-0035932226

Mostrar Detalles




Radiation response of n-type base InP solar cells

2001 | JOURNAL_ARTICLE

DOI: 10.1063/1.1398592

EID: 2-s2.0-0040927353

Mostrar Detalles




Control of phase modulation in InGaAs epilayers

2000 | JOURNAL_ARTICLE

DOI: 10.1063/1.126592

EID: 2-s2.0-0042691348

Mostrar Detalles




Electron beam induced current and cathodoluminescence study of proton irradiated quantum-well solar cells

2000 | CONFERENCE_PAPER

DOI: 10.1109/PVSC.2000.916132

EID: 2-s2.0-33947637440

Mostrar Detalles




Cathodoluminescence study of pyramidal facets in piezoelectric InGaAs/GaAs multiple quantum well pin photodiodes

1999 | JOURNAL_ARTICLE

DOI: 10.1016/S0026-2692(98)00147-5

EID: 2-s2.0-0345581346

Mostrar Detalles




Detailed defect study in proton irradiated InP/Si solar cells

1999 | JOURNAL_ARTICLE

DOI: 10.1063/1.371262

EID: 2-s2.0-0032621423

Mostrar Detalles




Effect of In-content on the misfit dislocation interaction in InGaAs/GaAs layers

1999 | JOURNAL_ARTICLE

EID: 2-s2.0-8444224364

Mostrar Detalles




Electron microscopy study of SiC obtained by the carbonization of Si(111)

1999 | JOURNAL_ARTICLE

EID: 2-s2.0-0242580459

Mostrar Detalles




Failure analysis of heavily proton irradiated p+-n InGaP solar cells by EBIC and cathodoluminescence

1999 | JOURNAL_ARTICLE

DOI: 10.1016/S0921-5107(99)00096-3

EID: 2-s2.0-0033283794

Mostrar Detalles




Growth of III-nitrides on Si(1 1 1) by molecular beam epitaxy. Doping, optical, and electrical properties

1999 | JOURNAL_ARTICLE

DOI: 10.1016/S0022-0248(98)01346-3

EID: 2-s2.0-0038606430

Mostrar Detalles




Growth rate and critical temperatures to avoid the modulation of composition of InGaAs epitaxial layers

1999 | JOURNAL_ARTICLE

DOI: 10.1063/1.123926

EID: 2-s2.0-0041924335

Mostrar Detalles




Influence of Si doping on the subgrain structure of GaN grown on AlN/Si(111)

1999 | JOURNAL_ARTICLE

DOI: 10.1002/(SICI)1521-396X(199911)176:1<401::AID-PSSA401>3.0.CO;2-D

EID: 2-s2.0-0343462255

Mostrar Detalles




Influence of substrate misorientation on the optical and structural properties of InGaAs/GaAs single strained quantum wells grown on (111)B GaAs by molecular beam epitaxy

1999 | JOURNAL_ARTICLE

DOI: 10.1016/S0026-2692(98)00138-4

EID: 2-s2.0-0345581354

Mostrar Detalles




Influence of substrate misorientation on the structural characteristics of InGaAs/GaAs MQW on (111)B GaAs grown by MBE

1999 | JOURNAL_ARTICLE

EID: 2-s2.0-0345580693

Mostrar Detalles




MBE growth of GaN and AlGaN layers on Si(1 1 1) substrates: Doping effects

1999 | JOURNAL_ARTICLE

DOI: 10.1016/S0022-0248(98)01365-7

EID: 2-s2.0-0038797130

Mostrar Detalles




Multiple quantum well GaAs/AlGaAs solar cells: Transport and recombination properties by means of EBIC and cathodoluminescence

1999 | JOURNAL_ARTICLE

DOI: 10.1016/S0921-5107(99)00095-1

EID: 2-s2.0-0033284889

Mostrar Detalles




New relaxation mechanisms in InGaAs/GaAs (111) multiple quantum well

1999 | JOURNAL_ARTICLE

DOI: 10.1016/S0026-2692(98)00154-2

EID: 2-s2.0-0342894019

Mostrar Detalles




Optical properties of InxGa1-xAs/GaAs MQW structures on (1 1 1)B GaAs grown by MBE: Dependence on substrate miscut

1999 | JOURNAL_ARTICLE

DOI: 10.1016/S0022-0248(98)01531-0

EID: 2-s2.0-0345044920

Mostrar Detalles




Piezoelectric InGaAs/GaAs (111)B multiple quantum well photodiodes: Optoelectronic properties by electron beam induced current and cathodoluminescence

1999 | JOURNAL_ARTICLE

DOI: 10.1016/S0026-2692(98)00145-1

EID: 2-s2.0-0344287197

Mostrar Detalles




Properties of homoepitaxial and heteroepitaxial GaN layers grown by plasma-assisted MBE

1999 | JOURNAL_ARTICLE

DOI: 10.1002/(SICI)1521-396X(199911)176:1<447::AID-PSSA447>3.0.CO;2-A

EID: 2-s2.0-0343898013

Mostrar Detalles




Radiation-induced order-disorder transition in p+-n InGaP solar cells

1999 | JOURNAL_ARTICLE

DOI: 10.1063/1.123936

EID: 2-s2.0-0345045514

Mostrar Detalles




Relaxation study of InxGa1-xAs/GaAs quantum-well structures grown by MBE on (0 0 1) and (1 1 1)B GaAs for long wavelength applications

1999 | JOURNAL_ARTICLE

DOI: 10.1016/S0022-0248(99)00324-3

EID: 2-s2.0-0141607994

Mostrar Detalles




Spatial distribution of radiation-induced defects in p+-n InGaP solar cells

1999 | JOURNAL_ARTICLE

DOI: 10.1063/1.124188

EID: 2-s2.0-0344614597

Mostrar Detalles




The effect of Si doping on the defect structure of GaN/AIN/Si(111)

1999 | JOURNAL_ARTICLE

DOI: 10.1063/1.123345

EID: 2-s2.0-0032615080

Mostrar Detalles




Transmission electron microscopy study of InGaAs/InP superlattices grown on V-shaped surface InP substrates

1999 | JOURNAL_ARTICLE

EID: 2-s2.0-0032630882

Mostrar Detalles




Cathodoluminescence study of heavily proton irradiated heteroepitaxial n+-p InP/Si solar cells

1998 | BOOK

EID: 2-s2.0-0032306877

Mostrar Detalles




Characterisation by TEM and X-ray diffraction of linearly graded composition InGaAs buffer layers on (001) GaAs

1998 | JOURNAL_ARTICLE

EID: 2-s2.0-1542778883

Mostrar Detalles




Critical thickness for the saturation state of strain relaxation in the InGaAs/GaAs systems

1998 | JOURNAL_ARTICLE

DOI: 10.1063/1.121212

EID: 2-s2.0-0344980226

Mostrar Detalles




Failure analysis of neutron-irradiated MQW InGaAsP/InP lasers by EBIC

1998 | BOOK

EID: 2-s2.0-17344365976

Mostrar Detalles




Influence of interface dislocations on surface kinetics during epitaxial growth of InGaAs

1998 | JOURNAL_ARTICLE

EID: 2-s2.0-18844475380

Mostrar Detalles




Optical emission of a one-dimensional electron gas in semiconductor V-shaped quantum wires

1998 | JOURNAL_ARTICLE

DOI: 10.1103/PhysRevB.58.10705

EID: 2-s2.0-0542422199

Mostrar Detalles




Relaxation mechanism of InGaAs single and graded layers grown on (111)B GaAs

1998 | JOURNAL_ARTICLE

EID: 2-s2.0-0032045633

Mostrar Detalles




A work-hardening based model of the strain relief in multilayer graded-buffer structures

1997 | JOURNAL_ARTICLE

DOI: 10.1063/1.120258

EID: 2-s2.0-0041924321

Mostrar Detalles




Advantages of thin interfaces in step-graded buffer structures

1997 | JOURNAL_ARTICLE

EID: 2-s2.0-0042765183

Mostrar Detalles




EBIC mode characterization of transport properties on laser heterostructures

1997 | JOURNAL_ARTICLE

EID: 2-s2.0-0006418454

Mostrar Detalles




Influence of the surface morphology on the relaxation of low-strained InxGa1 - xAs linear buffer structures

1997 | JOURNAL_ARTICLE

EID: 2-s2.0-0031550005

Mostrar Detalles




Structural study of AlGaAs/InGaAs superlattices grown by MBE on (111)B GaAs substrates

1997 | JOURNAL_ARTICLE

DOI: 10.1016/S0921-5107(96)01737-0

EID: 2-s2.0-0031071146

Mostrar Detalles




Work-hardening effects in the lattice relaxation of single lay er heterostructures

1997 | JOURNAL_ARTICLE

DOI: 10.1063/1.120092

EID: 2-s2.0-0344127223

Mostrar Detalles




Comparison of the crystalline quality of step-graded and continuously graded InGaAs buffer layers

1996 | JOURNAL_ARTICLE

DOI: 10.1016/S0022-0248(96)00665-3

EID: 2-s2.0-0030566425

Mostrar Detalles




Energy-loss dependence of inelastic interactions between high-energy electrons and semiconductors: A model to determine the spatial distribution of electron-hole pairs generation

1996 | JOURNAL_ARTICLE

DOI: 10.1016/S0921-5107(96)01700-X

EID: 2-s2.0-0042615903

Mostrar Detalles




SCH laser recombination rate from EBIC profiles

1996 | JOURNAL_ARTICLE

DOI: 10.1016/S0921-5107(96)01701-1

EID: 2-s2.0-0030421953

Mostrar Detalles




Design of InGaAs linear graded buffer structures

1995 | JOURNAL_ARTICLE

EID: 2-s2.0-36449005204

Mostrar Detalles




Dislocation behavior in InGaAs step- and alternating step-graded structures: Design rules for buffer fabrication

1995 | JOURNAL_ARTICLE

DOI: 10.1063/1.115341

EID: 2-s2.0-0000102276

Mostrar Detalles




A comparative study of CoRe superlattices sputtered on glass and Si substrates by grazing angle of incidence RBS, HRTEM, PAC, magnetic and transport properties studies

1994 | JOURNAL_ARTICLE

DOI: 10.1016/0168-583X(94)95814-9

EID: 2-s2.0-0000871939

Mostrar Detalles




A study of the defect structure in GaAs layers grown at low and high temperatures on Si(001) substrates

1994 | JOURNAL_ARTICLE

DOI: 10.1016/0921-5107(94)90046-9

EID: 2-s2.0-0028725953

Mostrar Detalles




Dislocation distribution in graded composition InGaAs layers

1994 | CONFERENCE_PAPER

EID: 2-s2.0-0028344470

Mostrar Detalles




Step-graded buffer layer study of the strain relaxation by transmission electron microscopy

1994 | JOURNAL_ARTICLE

DOI: 10.1016/0921-5107(94)90114-7

EID: 2-s2.0-0028695725

Mostrar Detalles




Strain relief in linearly graded composition buffer layers: A design scheme to grow dislocation-free (<105cm-2) and unstrained epilayers

1994 | JOURNAL_ARTICLE

DOI: 10.1063/1.112707

EID: 2-s2.0-21544454349

Mostrar Detalles




Study of the defects structure in GaAs1-xPx/GaAs as x<0.25

1994 | CONFERENCE_PAPER

EID: 2-s2.0-0027987674

Mostrar Detalles




TEM characterization of GaAs pin diodes at low temperatures on Si substrates

1994 | CONFERENCE_PAPER

EID: 2-s2.0-0028015280

Mostrar Detalles




Transmission electron microscopy study of InxGa1-xAs/GaAs multilayer buffer structures used as dislocation filters

1994 | JOURNAL_ARTICLE

DOI: 10.1016/0921-5107(94)90118-X

EID: 2-s2.0-0028698797

Mostrar Detalles




A study of the evolution process of antiphase boundaries in GaAs on Si

1993 | JOURNAL_ARTICLE

DOI: 10.1007/BF02661632

EID: 2-s2.0-51249161426

Mostrar Detalles




Experimental evidence of the structure of annihilation of antiphase boundaries in GaAs on Si

1993 | JOURNAL_ARTICLE

DOI: 10.1016/0167-577X(93)90094-E

EID: 2-s2.0-0027146741

Mostrar Detalles




Structural Characterization of GaP/GaAs/GaP heterostructure by TEM

1993 | CONFERENCE_PAPER

EID: 2-s2.0-0027803855

Mostrar Detalles




Thermal evolution of a sample of La2O3exposed to the atmosphere

1993 | JOURNAL_ARTICLE

DOI: 10.1016/0040-6031(93)85026-6

EID: 2-s2.0-43949165920

Mostrar Detalles




High-resolution electron microscopy study of ALMBE InAs grown on (001) GaAs substrates

1992 | JOURNAL_ARTICLE

DOI: 10.1016/0304-3991(92)90134-6

EID: 2-s2.0-0026832919

Mostrar Detalles




HREM characterization of metal catalysts supported on rare-earth oxides: samarium oxide as support

1990 | JOURNAL_ARTICLE

DOI: 10.1016/0304-3991(90)90058-T

EID: 2-s2.0-0025514375

Mostrar Detalles




Metal-Support Interaction Phenomena in Some High Metal Loading Lanthana Supported Rhodium Catalysts

1989 | BOOK

DOI: 10.1016/S0167-2991(08)60676-X

EID: 2-s2.0-0347045347

Mostrar Detalles




Characterisation of rare earth oxide supported metal catalysts. Study of some ceria supported rhodium phases

1988 | JOURNAL_ARTICLE

DOI: 10.1016/0920-5861(88)85029-6

EID: 2-s2.0-0023326347

Mostrar Detalles




Study of the interaction of two hexagonal neodymium oxides with atmospheric CO2 and H2O

1988 | JOURNAL_ARTICLE

DOI: 10.1007/BF01154619

EID: 2-s2.0-0023997225

Mostrar Detalles




The chemistry in air of the rare-earth-metal sesquioxides. Comparative study of hexagonal and cubic neodymia samples

1988 | JOURNAL_ARTICLE

DOI: 10.1039/DT9880001765

EID: 2-s2.0-37049082816

Mostrar Detalles




Behaviour of neodymia as a support of highly dispersed rhodium

1987 | JOURNAL_ARTICLE

DOI: 10.1016/S0020-1693(00)81048-8

EID: 2-s2.0-45949113277

Mostrar Detalles




Behaviour of rare earth sesquioxides exposed to atmospheric carbon dioxide and water

1987 | JOURNAL_ARTICLE

DOI: 10.1016/0168-7336(87)80085-2

EID: 2-s2.0-0023435547

Mostrar Detalles




Preparation of catalysts constituted by rhodium supported on two cerium dioxides with different surface area

1987 | JOURNAL_ARTICLE

DOI: 10.1016/0254-0584(87)90116-7

EID: 2-s2.0-0023428684

Mostrar Detalles




Preparation of lanthana supported rhodium catalysts. Occurrence of heavy carbonation phenomena on the support.

1987 | JOURNAL_ARTICLE

DOI: 10.1016/S0166-9834(00)80696-X

EID: 2-s2.0-0023362654

Mostrar Detalles




Preparation of some rare earth oxide supported rhodium catalysts: Study of the supports

1987 | JOURNAL_ARTICLE

DOI: 10.1016/0254-0584(87)90093-9

EID: 2-s2.0-0023398948

Mostrar Detalles




Solid state chemistry of the preparation of lanthana-supported metal catalysts - study of the impregnation step

1987 | JOURNAL_ARTICLE

DOI: 10.1007/BF01161496

EID: 2-s2.0-0023438075

Mostrar Detalles




Stem and microdiffraction studies of Rh/CeO2

1987 | JOURNAL_ARTICLE

DOI: 10.1016/0739-6260(87)90052-9

EID: 2-s2.0-0000126206

Mostrar Detalles




Study of the aging in air of a cubic sample of samaria

1987 | JOURNAL_ARTICLE

DOI: 10.1016/0025-5408(87)90160-7

EID: 2-s2.0-0023089383

Mostrar Detalles




Study of the support evolution through the process of preparation of rhodium/lanthana catalysts

1987 | JOURNAL_ARTICLE

DOI: 10.1039/F19878302279

EID: 2-s2.0-0342720038

Mostrar Detalles




The influence of the structural nature of samaria on its behaviour against atmospheric CO2and H2O

1987 | JOURNAL_ARTICLE

DOI: 10.1016/0167-577X(87)90036-X

EID: 2-s2.0-0023534663

Mostrar Detalles




Characterization of an experimental TPD-MS system. Reliability problems

1986 | JOURNAL_ARTICLE

DOI: 10.1016/0040-6031(86)87102-7

EID: 2-s2.0-45949127782

Mostrar Detalles




Comments on the preparation of M/4f oxide catalysts

1986 | JOURNAL_ARTICLE

DOI: 10.1016/S0166-9834(00)81369-X

EID: 2-s2.0-33748584387

Mostrar Detalles




Characterization of samaria samples stabilized in air

1985 | JOURNAL_ARTICLE

DOI: 10.1016/0022-5088(85)90354-6

EID: 2-s2.0-0022112322

Mostrar Detalles




Study of some aspects of the reactivity of La2O3 with CO2 and H2O

1985 | JOURNAL_ARTICLE

DOI: 10.1007/BF01026524

EID: 2-s2.0-0022010626

Mostrar Detalles




Influence of the textural properties on the catalytic activity of 4f oxides

1984 | JOURNAL_ARTICLE

DOI: 10.1016/0376-4583(84)90116-X

EID: 2-s2.0-0021458287

Mostrar Detalles




Alcohol decomposition as reaction test to analyse the catalytic properties of 4f oxides

1983 | JOURNAL_ARTICLE

DOI: 10.1524/zpch.1983.138.2.229

EID: 2-s2.0-84913401730

Mostrar Detalles




Analysis of some aspects of the catalytic behaviour of lanthanide oxides

1983 | JOURNAL_ARTICLE

DOI: 10.1016/0022-5088(83)90152-2

EID: 2-s2.0-0021094119

Mostrar Detalles




Characterization of an experimental TPD-MS system. Quantitative calibrations

1983 | JOURNAL_ARTICLE

DOI: 10.1016/0040-6031(83)80199-3

EID: 2-s2.0-0040788534

Mostrar Detalles




Dehydrogenating behaviour of 4f metal oxides in decomposition of butanols

1981 | JOURNAL_ARTICLE

DOI: 10.1016/0021-9517(81)90197-4

EID: 2-s2.0-33847185367

Mostrar Detalles




A TPD technique for nonrestrictive kinetic studies

1979 | JOURNAL_ARTICLE

DOI: 10.1007/BF02075978

EID: 2-s2.0-34250268627

Mostrar Detalles




On the estimation of the reaction mechanisms of thermal decomposition of solids from the fraction reacted at the maximum reaction rate

1978 | JOURNAL_ARTICLE

DOI: 10.1016/0040-6031(78)85015-1

EID: 2-s2.0-0001732009

Mostrar Detalles